| dc.contributor.author | Austine A Mulamaa, Julius M Mwabora, Andrew O Oduor, Cosmas M Muiva, Boniface Muthoka, Betty N Amukayia, Drinold A Mbete | |
| dc.date.accessioned | 2020-11-20T08:30:51Z | |
| dc.date.available | 2020-11-20T08:30:51Z | |
| dc.date.issued | 2015 | |
| dc.identifier.uri | https://repository.maseno.ac.ke/handle/123456789/2870 | |
| dc.description.abstract | Selenium-based chalcogenides are useful in telecommunication devices like infrared optics and threshold switching
devices. The investigated system of Ge5Se95-xZnx (0.0 ≤ x ≤ 4 at.%) has been prepared from high purity constituent
elements. Thin films from the bulk material were deposited by vacuum thermal evaporation. Optical absorbance
measurements have been performed on the as-deposited thin films using transmission spectra. The allowed optical
transition was found to be indirect and the corresponding band gap energy determined. The variation of optical band gap
energy with the average coordination number has also been investigated based on the chemical bonding between the
constituents and the rigidity behaviour of the system’s network. | en_US |
| dc.publisher | University of Nairobi, Kenya | en_US |
| dc.subject | Thermal evaporation; Ge-Se-Zn alloy; optical characterization. | en_US |
| dc.title | Stability Investigation in the Optical Properties of Thermally Evaporated Ge5Se95-x Znx Thin Films | en_US |
| dc.type | Article | en_US |
