| dc.contributor.author | Austine A. Mulama, Julius M. Mwabor, Andrew O. Oduor Cosmas M. Muiva and Boniface Muthoka | |
| dc.date.accessioned | 2022-01-19T06:26:57Z | |
| dc.date.available | 2022-01-19T06:26:57Z | |
| dc.date.issued | 2014 | |
| dc.identifier.uri | https://repository.maseno.ac.ke/handle/123456789/4367 | |
| dc.description.abstract | Amorphous thin films of Se85-xTe15Sbx (x = 0.0, 0.5, 2.5, and 5.0 at. %) deposited by flash evaporation technique,
have been investigated in the wavelength range of 500nm-3000nm. It is found that the effect of increasing antimony
content and film thickness on the as-deposited films led to increase in the absorption coefficient. The optical band
gap energy decreased with increase in antimony concentration but increased with increase in film thickness. | en_US |
| dc.publisher | Africa Journal of Physical Sciences | en_US |
| dc.subject | Amorphous Chalcogenide, Alloy, Film Thickness, and Optical Property. | en_US |
| dc.title | Investigation of the effect of film thickness on the optical properties of amorphous Se85-xte15sbx thin films | en_US |
| dc.type | Article | en_US |
